2009 - 08 -18 page 1 bsp88 rev. 2.1 sipmos small-signal-transistor product summary v ds 240 v r ds ( on ) 6 i d 0.35 a feature n-channel enhancement mode logic level d v /d t rated pg-s ot223 vps05163 1 2 3 4 marking type package tape and reel information bsp88 p g - sot223 l 6327: 1 000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 0.35 0.28 a pulsed drain current t a =25c i d puls 1.4 reverse diode d v /d t i s =0.35a, v ds =192v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v esd class (jesd22-a114-hbm) 1a (>250v, <500v) power dissipation t a =25c p tot 1.8 w operating and storage temperature t j , t st g -55... +150 c iec climatic category; din iec 68-1 55/150/56 ? pb-free lead plating; rohs compliant bsp88 pb-free lead plating; rohs compliant x qualified according to aec q101 packaging non dry 2 .8v rated
bsp88 rev. 2.1 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point (pin 4) r thjs - - 25 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 115 70 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =250a v (br)dss 240 - - v gate threshold voltage, v gs = v ds i d =108a v gs(th) 0.6 1 1.4 zero gate voltage drain current v ds =240v, v gs =0, t j =25c v ds =240v, v gs =0, t j =150c i dss - - - - 0.1 10 a gate-source leakage current v gs =20v, v ds =0 i gss - 1 10 na drain-source on-state resistance v gs =2.8v, i d =0.014a r ds(on) - 4.9 15 drain-source on-state resistance v gs =4.5v, i d =0.32a r ds(on) - 4.6 7.5 drain-source on-state resistance v gs =10v, i d =0.35a r ds(on) - 4 6 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 2009 - 08 -18 page 2
bsp88 rev. 2.1 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =0.28a 0.19 0.38 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 76 95 pf output capacitance c oss - 12 15 reverse transfer capacitance c rss - 6 9 turn-on delay time t d ( on ) v dd =120v, v gs =4.5v, i d =0.35a, r g =15 - 3.6 5.4 ns rise time t r - 3.5 5.2 turn-off delay time t d ( off ) - 17.9 26.8 fall time t f - 18.9 28.3 gate charge characteristics gate to source charge q g s v dd =192v, i d =0.35a - 0.2 0.3 nc gate to drain charge q g d - 2 3 gate charge total q g v dd =192v, i d =0.35a, v gs =0 to 10v - 4.5 6.8 gate plateau voltage v (p lateau ) v dd =192v, i d = 0.35 a - 2.7 - v reverse diode inverse diode continuous forward current i s t a =25c - - 0.35 a inv. diode direct current, pulse d i sm - - 1.4 inverse diode forward voltage v sd v gs =0, i f = i s - 0.86 1.2 v reverse recovery time t rr v r =120v, i f = l s , d i f /d t =100a/s - 66 82 ns reverse recovery charge q rr - 119 149 nc 2009 - 08 -18 page 3
bsp88 rev. 2.1 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 w 1.9 bsp88 p tot 2 drain current i d = f ( t a ) parameter: v gs 10 v 0 20 40 60 80 100 120 c 160 t a 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 a 0.38 bsp88 i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 0 10 1 10 2 10 3 v v ds -3 10 -2 10 -1 10 0 10 1 10 a bsp88 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 160.0 s 4 transient thermal impedance z thja = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w bsp88 z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 2009 - 08 -18 page 4
bsp88 rev. 2.1 5 typ. output characteristic i d = f ( v ds ) parameter: t j = 25 c, v gs 0 0.5 1 1.5 2 2.5 3 v 4 v ds 0 0.08 0.16 0.24 0.32 0.4 0.48 a 0.64 i d 2.6v 3.2v 3.4v 3.8v 4v 4.4v 5v 6v 7v 10v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j = 25 c, v gs 0 0.08 0.16 0.24 0.32 0.4 0.48 a 0.64 i d 0 1 2 3 4 5 6 7 9 r ds(on) 2.6v 3.2v 3.4v 3.8v 4.4v 5v 6v 7v 10v 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t j = 25 c 0 0.5 1 1.5 2 2.5 v 3.5 v gs 0 0.08 0.16 0.24 0.32 0.4 0.48 a 0.64 i d 8 typ. forward transconductance g fs = f( i d ) parameter: t j = 25 c 0 0.08 0.16 0.24 0.32 0.4 0.48 a 0.64 i d 0 0.1 0.2 0.3 0.4 s 0.6 g fs 2009 - 08 -18 page 5
bsp88 rev. 2.1 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 0.35 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 2 4 6 8 10 12 14 16 18 20 22 24 30 bsp88 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds ; i d = 108 a -60 -20 20 60 100 c 160 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v 1.8 v gs(th) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz, t j = 25 c 0 5 10 15 20 v 30 v ds 0 10 1 10 2 10 3 10 pf c crss coss ciss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -2 10 -1 10 0 10 1 10 a bsp88 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 2009 - 08 -18 page 6
bsp88 rev. 2.1 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.35 a pulsed, t j = 25 c 0 1 2 3 4 5 nc 7 q g 0 2 4 6 8 10 12 v 16 bsp88 v gs 0.2 v ds max 0.5 v ds max 0.8 v ds max 14 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 216 221 226 231 236 241 246 251 256 261 266 271 276 v 291 bsp88 v (br)dss 2009 - 08 -18 page 7
2009 - 08 -18 page 8 bsp88 rev. 2.1
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